Modelling and characterisation of the OCVD response at an arbitrary time and injection level

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1127-1131

  Bellone, Salvatore ^a   Neitzert, Heinz Christoph ^a   Domenico Licciardo, Gian ^a  

^a UNIVERSITY OF SALERNO   (Italy)

Author keywords

Diode; High injection; Lifetime; OCVD; Recombination

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; DIFFUSION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; HALL EFFECT; LEAKAGE CURRENTS; MATHEMATICAL MODELS;

HIGH INJECTION; LIFETIME; OPEN CIRCUIT VOLTAGE DECAY (OCVD); RECOMBINATION;

DIODES;

EID: 1842854547     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.02.002     Document Type: Article

References (6)

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