Current status and future prospects of 4H-SiC power RF bipolar junction transistors

2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009

Volumn , Issue , 2009, Pages 2060-2064

  Zhao, Feng ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

BJT's; L band; Radar; RF; S band; SIC; UHF

Indexed keywords

BJT'S; L-BAND; RF; S-BAND; SIC; UHF;

HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE OPERATIONS; INDUSTRIAL ELECTRONICS; OHMIC CONTACTS; RADAR; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TRANSISTORS; TUNNEL DIODES; WAVE INTERFERENCE;

BIPOLAR TRANSISTORS;

EID: 70349308082     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIEA.2009.5138564     Document Type: Conference Paper

References (12)

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