Paradoxes related to electron-hole scattering in junction structures

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Mnatsakanov, T T ^a   Levinshtein, M E ^b   Tandoev, A G ^a   Yurkov, S N ^a   Palmour, J W ^c  

^a ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR DEVICES; ELECTRON-HOLE SCATTERING (EHS); EMITTER LAYERS; JUNCTION STRUCTURES;

BIPOLAR SEMICONDUCTOR DEVICES; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; ENERGY DISSIPATION; HOLE MOBILITY; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS;

ELECTRON SCATTERING;

EID: 20944437005     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897839     Document Type: Article

References (27)

1. L. V. Davies, Nature (London) 194, 762 (1962).
2. R. A. Höpfel, J. Shah, P. A. Wolff, and A. C. Gossard, Phys. Rev. Lett. 56, 2736 (1986).
3. R. A. Höpfel, J. Shah, P. A. Wolff, and A. C. Gossard, Appl. Phys. Lett. 49, 572 (1986).
4. T. T. Mnatsakanov, I. L. Rostovtsev, and N. I. Philatov, Sov. Phys. Semicond. 18, 807 (1984).
5. T. T. Mnatsakanov, Phys. Status Solidi B 143, 225 (1987).
6. M. E. Levinshtein, and T. T. Mnatsakanov, IEEE Trans. Electron Devices 49, 702 (2002).
7. T. T. Mnatsakanov, L. I. Rostovtsev, and N. I. Philatov, Solid-State Electron. 30, 579 (1987).
8. R. Dutta and A. Rothwarf, IEEE Trans. Power Electron. 7, 430 (1992).
9. N. I. Philatov, D. G. Yakovlev, and B. O. Nakropin, Solid-State Electron. 36, 463 (1993).
10. T. T. Mnatsakanov, L. I. Pomortseva, and V. B. Shuman, Solid-State Electron. 41, 1871 (1997).
11. B. N. Gresserov, and T. T. Mnatsakanov, Sov. Phys. Tech. Phys. 31, 1090 (1986).
12. T. T. Mnatsakanov, V. B. Shuman, L. I. Pomortseva, D. Schroder, and A. Schlogl, Solid-State Electron. 44, 383 (2000).
13. T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, and S. N. Yurkov, Semiconductors 38, 56 (2004).
14. B. N. Gresserov, and T. T. Mnatsakanov, Sov. Phys. Semicond. 24, 1042 (1990).
15. V. A. Kuzmin, T. T. Mnatsakanov, and V. B. Shuman, Sov. Phys. Tech. Phys. Lett.. 6, 299 (1980).
16. T. T. Mnatsakanov, M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, A. G. Tandoev, and S. N. Yurkov, J. Appl. Phys. 93, 1095 (2003).
17. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
18. M E. Levinshtein, T. T. Mnatsakanov, P. A. Ivanov, R. Singh, J. W. Palmour, and S. N. Yurkov, Solid-State Electron. 48, 807 (2004).
19. M. E. Levinshtein, P. A. Ivanov, T. T. Mnatsakanov, J. Palmour, A. Agarwal, and M. K. Das, Abstracts of the V International Scientific Seminar on Silicon Carbide and Related Materials (ISSCRM-2004), Novgorod the Great, Russia, 25-26 May 2004, p. 120 (unpublished).
20. P. A. Ivanov, M. E. Levinshtein, T. T. Mnatsakanov, J. W. Palmour, R. Singh, K. G. Irvin, and M. Das, Abstracts of the 5th European Conference on Silicon Carbide and Related Materials ECSCRM-2004, Bologna, Italy, 31 August-4 September 2004, p. 470 (unpublished).
21. M. E. Levinshtein, T. T. Mnatsakanov, P. A. Ivanov, J. W. Palmour, S. L. Rumyantsev, R. Singh, and S. N. Yurkov, Electron. Lett. 36, 1241 (2000).
22. M. E. Levinshtein, T. T. Mnatsakanov, P. A. Ivanov, J. W. Palmour, S. L. Rumyantsev, R. Singh, and S. N. Yurkov, IEEE Trans. Electron Devices 48, 1703 (2001).
23. Elementary Semiconductors and A3 B5 Compounds, Handbook Series of Semiconductor Parameters Vol. 1, edited by, M. E. Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (World Scientific, Singapore, 1996).
24. P. A. Ivanov, M. E. Levinshtein, K. G. Irvin, O. Kordina, J. W. Palmour, S. L. Rumyantsev, and R. Singh, Electron. Lett. 35, 1382 (1999).
25. Properties of Advanced Semiconductor Materials GaN, AlN, InN, SiC, SiGe, edited by, M. E. Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (Wiley, New York, 2001).
26. P. A. Ivanov, M. E. Levinshtein, J. W. Palmour, S. L. Rumyantsev, and R. Singh, Semicond. Sci. Technol. 15, 908 (2000).
27. T. T. Mnatsakanov, D. Schroder, and A. Schlogl, Solid-State Electron. 42, 153 (1998).