Steady-state and transient characteristics of 10 kV 4H-SiC diodes

Solid-State Electronics

Volumn 48, Issue 5, 2004, Pages 807-811

  Levinshtein, Michael E ^a   Mnatsakanov, Tigran T ^b   Ivanov, Pavel A ^a   Singh, Ranbir ^c   Palmour, John W ^c   Yurkov, Sergey N ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Current voltage characteristics; Diode; Lifetime; Silicon carbide

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; THYRISTORS;

CURRENT RECOVERY TIME (CRT); LIFETIME; OPEN CIRCUIT VOLTAGE DECAY (OCVD);

SILICON CARBIDE;

EID: 1242276399     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.11.001     Document Type: Article

References (16)

1. Singh R, Irvin KG, Richmond JT, Palmour JW, High-temperature performance of 10 kV, 200 A (pulsed) 4H-SiC pin rectifiers. In: Proc. of the ICSCRM-2001. Tsukuba, Japan. p. 1265-8.
2. Levinshtein M.E., Mnatsakanov T.T., Ivanov P.A., Palmour J.W., Singh R. Carrier lifetime measurements in 10-kV 4H-SiC diodes. Electron. Lett. 39:2003;689-690.
3. Levinshtein M.E., Mnatsakanov T.T., Ivanov P.A., Palmour J.W., Rumyantsev S.L., Singh R., et al. Paradoxes of carrier lifetime measurements in high-voltage SiC diodes. IEEE Trans. Electron Dev. 48:2001;1703-1710.
4. Gossik B.R. About recovery characteritics of semiconductor rectifiers. J. Appl. Phys. 27:1956;905-910.
5. Schlangenotto H., Gerlach W. On the post-injection voltage decay of the p-s-n rectifiers at high injection levels. Solid State Electron. 15:1972;393-402.
6. Lax B., Neustadter T. Transient response of a p-n junction. J. Appl. Phys. 25:1954;1148-1154.
7. Mnatsakanov T.T., Rostovtsev I.L., Philatov N.I. Investigation of the effect of nonlinear physical phenomena on charge carrier transport in semiconductor devices. Solid State Electron. 30:1987;579-585.
8. Levinshtein M.E., Mnatsakanov T.T., Yurkov S.N., Ivanov P.A., Tandoev A.G., Agarwal A.K., et al. Turn-off operation of a 2.6 kV 4H-SiC gate turn-off thyristor in MOS-gate mode. Solid State Electron. 46:2002;1953-1957.
9. Mnatsakanov T.T., Levinshtein M.E., Ivanov P.A., Palmour J.W., Tandoev A.G., Yurkov S.N. Parameters of electron-hole scattering in silicon carbide. J. Appl. Phys. 93:2003;1095-1098.
10. Lindefelt U. Doping-induced band-edge displacement and bandgap narrowing in 3C-, 4H-, 6H-, and Si. J. Appl. Phys. 84:1998;2628-2637.
11. Galeskas A, Linnros J, Breitholtz B. Time-resolved imaging of radiative recombination in 4H-SiC p-i-n diodes. Appl Phys Lett 1999;74:3398-400.
12. Sze S.M. Physics of semiconductor devices. 1981;John Wiley & Sons, New York.
13. Landsberg P.T., Kousik G.S. The connection between carrier life-time and doping density in nondegenerate semiconductors. J. Appl. Phys. 56:1984;1696-1700.
14. Mnatsakanov T.T., Levinshtein M.E., Pomortseva L.I., Yurkov S.N. Carrier mobility model for simulation of SiC-based electronic devices. Semicond. Sci. Technol. 17:2002;974-977.
15. Levinshtein M.E., Rumyantsev S.L., Shur M.S. Properties of advanced semiconductor materials: GaN, AIN, InN, BN, SiC, SiGe. 2001;John Wiley & Sons.
16. Ivanov P.A., Levinshtein M.E., Irvin K.G., Kordina O., Palmour J.W., Rumyantsev S.L., et al. High hole lifetime (3.8 μs) in 4H-SiC diodes with 5. 5 kV blocking voltage. Electron. Lett. 35:1999;1382-1383.