Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation

Applied Physics Letters

Volumn 95, Issue 25, 2009, Pages

  Pandian, Ramanathaswamy ^a,b   Kooi, Bart J ^a   Oosthoek, Jasper L M ^a   Van Den Dool, Pim ^a   Palasantzas, George ^a   Pauza, Andrew ^c  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c Plarion Limited   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CRYSTALLINE PHASE; DATA STORAGE APPLICATIONS; ELECTRICALLY CONDUCTIVE; FILAMENT FORMATION; GESBTE FILM; GESBTE THIN FILM; HIGH-RESISTANCE STATE; PHASE CHANGES; PULSED DC VOLTAGE; RESISTANCE SWITCHING;

ANTIMONY ALLOYS; CONDUCTIVE FILMS; CURRENT VOLTAGE CHARACTERISTICS; GERMANIUM; REBOILERS; SWITCHING; TELLURIUM COMPOUNDS; THIN FILMS;

AMORPHOUS FILMS;

EID: 73449094517     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3276272     Document Type: Article

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