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Journal of Applied Physics

Volumn 109, Issue 2, 2011, Pages

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

(7) Tuttle, B R a,b Dhar, S c Ryu, S H c Zhu, X d,e Williams, J R d Feldman, L C a,e Pantelides, S T a,f

a VANDERBILT UNIVERSITY (United States)

b BEHREND COLLEGE (United States)

c Arkansas Power Electronics International Inc (United States)

d AUBURN UNIVERSITY (United States)

e RUTGERS UNIVERSITY (United States)

f OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONALS; EFFECTIVE MASS; FIRST-PRINCIPLES CALCULATION; GATE OXIDE; HIGH ELECTRON MOBILITY; HYDROGENIC IMPURITIES; INTERFACIAL DEFECT; INTERSTITIAL SITES; INVERSION LAYER; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; SODIUM IONS; UNDERLYING MECHANISM;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; LEAD OXIDE; METAL IONS; MOS DEVICES; MOSFET DEVICES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79551680367 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3533767 Document Type: Article

Times cited : (26)

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