Increase in the electron mobility in the inversion channel of a Si-MOS transistor in the case of ion polarization of the gate oxide

Semiconductors

Volumn 41, Issue 3, 2007, Pages 357-360

  Gulyaev, Yu V ^a   Zhdan, A G ^a   Chucheva, G V ^a  

^a INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

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Indexed keywords

EID: 33947395674     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607030219     Document Type: Article

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