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Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

Passivation effects of fluorine and hydrogen at the SiC- SiO2 interface

(4) Liu, Yingdi a Halfmoon, Michael R a Rittenhouse, Christine A a Wang, Sanwu a,b

a UNIVERSITY OF TULSA (United States)

b UNIVERSITY OF OKLAHOMA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FLUORINE; CARBON ATOMS; DEFECT PASSIVATION; DENSITY FUNCTIONAL THEORY CALCULATIONS; FIRST-PRINCIPLES; HIGH CONCENTRATION; HYDROGEN FLUORIDE; INTERFACE DEFECTS; MOLECULAR FLUORINE; MOLECULAR HYDROGEN; PASSIVATION EFFECT;

DEFECTS; DENSITY FUNCTIONAL THEORY; FLUORINE; HYDROGEN; MICROELECTRONICS; POINT DEFECTS; SILICON CARBIDE;

PASSIVATION;

EID: 78650413607 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3527943 Document Type: Article

Times cited : (16)

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