Shallow traps at P-doped SiO2/4H-SiC(0001) interface

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 338-341

  Okamoto, Dai ^a   Yano, Hiroshi ^a   Kotake, Shinya ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Interface states; SiC MOS interface; X ray photoelectron spectroscopy

Indexed keywords

CAPACITANCE; CHEMICAL BONDS; CHLORINE COMPOUNDS; ELECTRIC FIELD EFFECTS; INTERFACE STATES; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; PHOTOELECTRONS; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SILICON OXIDES; TEMPERATURE; WIDE BAND GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE VOLTAGE; CHANNEL MOBILITY; INTERFACE TRAPS; LOW TEMPERATURES; SHALLOW TRAPS; SI-CMOS; SI-SI BONDS; THREE FOLDS;

PHOSPHORUS COMPOUNDS;

EID: 79955086783     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.338     Document Type: Conference Paper

References (14)

1. D. Okamoto, H. Yano, K. Hirata, T. Hatayama and T. Fuyuki: IEEE Electron Devices Lett. Vol. 31 (2010), p. 710.
2. S. Dhar, X. D. Chen, P. M. Mooney, J. R. Williams and L. C. Feldman: Appl. Phys. Lett. Vol. 92 (2008), p. 102112.
3. V. V. Afanas'ev and A. Stesmans: Phys. Rev. Lett. Vol. 78 (1997), p. 2437.
4. T. E. Rudenko, I. N. Osiyuk, I. P. Tyagulski, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson: Solid-State Electron. Vol. 49 (2005), p. 545.
5. D. Okamoto, H. Yano, T. Hatayama and T. Fuyuki: Appl. Phys. Lett. Vol. 96 (2010), p. 203508.
6. K. Morino, S. Miyazaki and M. Hirose: Extended Abstracts of the 1997 Int. Conf. on Solid State and Devices and Materials, Hamamatsu, Japan (1997), p. 18.
7. G. Pensl, M. Bassler, F. Ciobanu, V. V. Afanas'ev, H. Yano, T. Kimoto, and H. Matsunami: Mat. Res. Soc. Symp. Proc. Vol. 640 (2001), p. H3.2.1.
8. J. L. Cantin, H. J. Bardeleben, Y. Ke, R. P. Devaty, and W. J. Choyke: Appl. Phys. Lett. Vol. 88 (2006), p. 092108.
9. M. Bassler, G. Pensl, and V. Afanas'ev: Diamond and Rel. Mat. Vol. 6 (1997), p. 1472.
10. E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson: J. Appl. Phys. Vol. 97 (2005), p. 034302.
11. C. Virojanadara and L. I. Johansson: Surf. Sci. Vol. 505 (2002), p. 358.
12. S. T. Pantelides et al.: Mat. Sci. Forum Vols. 527-529 (2006), p. 935.
13. C. Virojanadara and L. I. Johansson: Surf. Sci. Vol. 530 (2003), p. 17.
14. H. F. Li, S. Dimitrijev, D. Sweatman, D. Sweatman, H. B. Harrison, P. Tanner and B. Feil: J. Appl. Phys. Vol. 86 (1999), p. 4316.