Engineering Pseudosubstrates with Porous Silicon Technology

Engineering Materials

Volumn , Issue , 2011, Pages 47-65

  Blanchard, N P ^a   Boucherif, A ^a   Regreny, Ph ^a   Danescu, A ^a   Magoariec, H ^a   Penuelas, J ^a   Lysenko, V ^a   Bluet, J M ^a   Marty, O ^a   Guillot, G ^a   Grenet, G ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

Molecular Beam Epitaxy; Plastic Relaxation; Porous Silicon; Rapid Thermal Process; Seed Layer

Indexed keywords

MESOPOROUS MATERIALS; MOLECULAR BEAMS; OXIDATION; POROUS SILICON; SILICON WAFERS; SINGLE CRYSTALS; THERMAL ENGINEERING;

CONTROLLED OXIDATIONS; EPITAXIALLY GROWN; MESOPOROUS; MOLECULAR-BEAM EPITAXY; PLASTIC RELAXATION; POROSIFICATION; POROUS SILICON TECHNOLOGY; SEED FILMS; SEED LAYER; SILICON SUBSTRATES;

MOLECULAR BEAM EPITAXY;

EID: 82955241541     PISSN: 16121317     EISSN: 18681212     Source Type: Book Series    
DOI: 10.1007/978-3-642-15868-1_3     Document Type: Chapter

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