High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

Applied Physics Letters

Volumn 75, Issue 23, 1999, Pages 3638-3640

  Damlencourt, J F ^a   Leclercq, J L ^a   Gendry, M ^a   Regreny, P ^a   Hollinger, G ^a  

^a ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003834208     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125413     Document Type: Article

References (12)

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