Tensile strain engineering of Si thin films using porous Si substrates

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2466-2469

  Boucherif, A ^a   Blanchard, N P ^a   Regreny, P ^a   Marty, O ^a   Guillot, G ^a   Grenet, G ^a   Lysenko, V ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

Porous silicon; Strained silicon

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MONOCRYSTALLINE SILICON; POROUS SILICON; SILICON WAFERS; STRAINED SILICON; SURFACE ROUGHNESS; TEMPERATURE; TENSILE STRAIN; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

IN-PLANE EXPANSION; LOW COST METHODS; LOW-TEMPERATURE OXIDATION; MESOPOROUS SILICON; MICRO RAMAN SCATTERING SPECTROSCOPY; POROSIFICATION; STRAIN ANALYSIS; STRAIN ENGINEERING;

SUBSTRATES;

EID: 76049084862     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.161     Document Type: Article

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