Straining of monocrystalline silicon thin films with the use of porous silicon as stress generating nanomaterial

Applied Physics Letters

Volumn 88, Issue 10, 2006, Pages

  Marty, O ^a   Nychyporuk, T ^b   De La Torre, J ^b   Lysenko, V ^b   Bremond, G ^b   Barbier, D ^b  

^a UNIVERSITÉ LYON 1   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; STRAIN; STRESS ANALYSIS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

MONOCRYSTALLINE SILICON THIN FILMS; PHOTOLUMINESCENCE SPECTROSCOPY; STRAINING; STRESS GENERATING NANOMATERIALS;

POROUS SILICON;

EID: 33644931901     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2179620     Document Type: Article

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