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Volumn 29, Issue 7, 2000, Pages 897-900

Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

(7) Hobart, K D a Kub, F J a Fatemi, M a Twigg, M E a Thompson, P E a Kuan, T S b Inoki, C K b

a NAVAL RESEARCH LABORATORY (United States)

b STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOROSILICATE GLASS; BUCKLING; CHEMICAL RELAXATION; EXPANSION; GLASS BONDING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; STRAIN; SUBSTRATES; VISCOUS FLOW;

BOROPHOSPHOROSILICATE GLASS FILMS; COMPLIANT SUBSTRATES; ELASTIC STRAIN RELAXATION; HETEROEPITAXY; RELAXATION MECHANISMS; SILICON GERMIDE; STRAINED FILMS;

SEMICONDUCTING FILMS;

EID: 0034229176 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-000-0177-2 Document Type: Article

Times cited : (83)

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