SCOPUS 정보 검색 플랫폼

Volumn 74, Issue 7, 1999, Pages 1000-1002

Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

(7) Jones, A M a Jewell, J L b Mabon, J C c Reuter, E E a Bishop, S G a Roh, S D a Coleman, J J a

a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

b Picolight Inc (United States)

c University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; HETEROJUNCTIONS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

STRAIN INDUCED WARPING; WAVELENGTH EMISSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033556827 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123435 Document Type: Article

Times cited : (31)

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