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Thin Solid Films

Volumn 520, Issue 4, 2011, Pages 1202-1206

Transparent p/n diode device from a single zinc nitride sputtering target

(6) Kambilafka, V a Kostopoulos, A a Androulidaki, M a Tsagaraki, K a Modreanu, M b Aperathitis, E a

a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER (Greece)

b UNIVERSITY COLLEGE CORK (Ireland)

Author keywords

p Type ZnO; Sputtering; Transparent diode; Zinc nitride; Zinc oxide

Indexed keywords

ACCEPTOR DOPANTS; AR PLASMAS; P TYPE ZNO; P-TYPE ZNO FILM; PHOTOLUMINESCENCE MEASUREMENTS; POLYCRYSTALLINE; RECTIFYING BEHAVIORS; SINGLE PHASE; SPUTTERING TARGET; ZINC VACANCY; ZNO; ZNO FILMS;

CONDUCTIVE FILMS; FABRICATION; METALLIC FILMS; NITRIDES; OXIDE FILMS; OXYGEN; PLASMAS; SPUTTERING; ZINC COMPOUNDS; ZINC OXIDE;

ZINC;

EID: 82755197973 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.06.072 Document Type: Conference Paper

Times cited : (12)

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