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Volumn 278, Issue 1-4, 2005, Pages 305-310

Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy

Author keywords

A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; GRAIN SIZE AND SHAPE; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; THIN FILMS;

BLUE-SHIFT; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED); SEMICONDUCTING II-VI MATERIALS; X-RAY ROCKING CURVES (XRC);

ZINC OXIDE;

EID: 18444409062 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.01.024 Document Type: Conference Paper

Times cited : (16)

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