Influence of the reactive N2 gas flow on the properties of rf-sputtered ZnO thin films

Thin Solid Films

Volumn 515, Issue 24 SPEC. ISS., 2007, Pages 8780-8784

  Wang, Jinzhong ^a   Sallet, Vincent ^b   Jomard, François ^b   Botelho do Rego, Ana M ^c   Elamurugu, Elangovan ^a   Martins, Rodrigo ^a   Fortunato, Elvira ^a  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

^b Centre National de la Recherche Scientifique   (France)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

Hall measurement; SIMS; Sputtering; XPS; ZnO thin films

Indexed keywords

FLOW OF GASES; HALL EFFECT; NITROGEN; OPTICAL BAND GAPS; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CRYSTALLINITY; CRYSTALLOGRAPHIC PLANE; HALL MEASUREMENT;

THIN FILMS;

EID: 34548827052     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.062     Document Type: Article

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