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Volumn 518, Issue 4, 2009, Pages 1036-1039

Properties of n-type ZnN thin films as channel for transparent thin film transistors

Author keywords

OES; Sputtering; TFT; Thin film; Zinc nitride

Indexed keywords

CHANNEL LAYERS; ELECTRICAL PROPERTY; HIGHER TEMPERATURES; LOW RESISTIVITY; NITRIDE THIN FILMS; NITROGEN ANNEALING; OES; RF-MAGNETRON SPUTTERING; RF-POWER; TFT; TRANSISTOR CHARACTERISTICS; TRANSPARENT THIN FILM TRANSISTOR;

EID: 71649108293     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.155     Document Type: Article
Times cited : (37)

References (23)
  • 8
    • 71649095179 scopus 로고    scopus 로고
    • Transparent Electronics
    • Wager J.F., Keszler D.A., and Presley R.E. (Eds). 978-0-387-72341-9
    • Transparent Electronics. In: Wager J.F., Keszler D.A., and Presley R.E. (Eds). Springer Science + Business Media (2008). 978-0-387-72341-9
    • (2008) Springer Science + Business Media


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.