The effect of nitrogen on the properties of zinc nitride thin films and their conversion into p-ZnO:N films

Thin Solid Films

Volumn 515, Issue 24 SPEC. ISS., 2007, Pages 8573-8576

  Kambilafka, V ^a   Voulgaropoulou, P ^a   Dounis, S ^a   Iliopoulos, E ^b   Androulidaki, M ^b   Tsagaraki, K ^b   Saly V ^c   Ruzinsky M ^c   Prokein, P ^c   Aperathitis, E ^b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

Annealing; OES; Optical properties; Oxidation; Sputtering; ZnN; ZnO

Indexed keywords

MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PRESSURE EFFECTS; RAPID THERMAL ANNEALING; STOICHIOMETRY; ZINC COMPOUNDS;

BAND GAP MATERIALS; OXIDIZED FILMS; THERMALLY TREATED FILMS; ZINC NITRIDE;

CONDUCTIVE FILMS;

EID: 34548822156     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.102     Document Type: Article

References (17)

1. Kuriyama K., Takahashi Y., and Sunohara F. Phys. Rev., B 48 (1993) 2781
2. Futsuhara M., Yoshioka K., and Takai O. Thin Solid Films 322 (1998) 274
3. Toyoura K., Tsujimura H., Goto T., Hachiya K., Hagiwara R., and Ito Y. Thin Solid Films 492 (2005) 88
4. Du W., Zong F., Ma H., Ma J., Zhang M., Feng X., Li H., Zhang Z., and Zhao P. Cryst. Res. Technol. 41 (2006) 889
5. Zong F., Ma H., Du W., Ma J., Zhang X., Xiao H., Ji F., and Xue C. Appl. Surf. Sci. 252 (2006) 7983
6. Suda T., and Kakishita K. J. Appl. Phys. 99 (2006) 076101-1
7. Pereira N., Klein L.C., Amatucci G.G., et al. J. Electrochem. Soc. 149 (2002) A262
8. Cannavo D., Knopp G., Radi P., Beaud P., Julej M., Bodek P., Gerber T., and Wokaun A. J. Mol. Struct. 740 (2005) 87
9. Wang C., Ji Z., Liu K., Xiang Y., and Ye Z. J. Cryst. Growth 259 (2003) 279
10. Li B.S., Liu Y.C., Zhi Z.Z., Shen D.Z., Lu Y.M., Zhang J.Y., Fan X.W., Mu R.X., and Henderson D.O. J. Mater. Res. 18 (2003) 8
11. Wang D., Liu Y.C., Mu R., Zhang J.Y., Lu Y.M., Shen D.Z., and Fan X.W. J. Phys., Condens. Matter 16 (2004) 4635
12. Kaminska E., Piotrowska A., Kossut J., Butkute R., Dobrowolski W., Lukasiewicz R., Barcz A., Jakieta R., Dynowska E., Przezdziecka E., Aleszkiewicz M., Wojnar P., and Kowalczyk E. Phys. Status Solidi, C 2 (2005) 1119
13. Nakano Y., Morikawa T., Ohwaki T., and Taga Y. Appl. Phys. Lett. 88 (2006) 172103
14. Kambilafka V., Voulgaropoulou P., Dounis S., Iliopoulos E., Androulidaki M., Ružinský M., Šály V., and Aperathitis E. EMRS 20006, Symposium R: "Advances in Transparent Electronics: from Materials to Devices" (May 29-June 2 2006) Nice, France
15. Klini A., Manousaki A., Anglos D., and Fotakis C. J. Appl. Phys. 98 (2005) 123301
16. Rommeluere J.F., Svob L., Jomard F., Mimila-Arroyo J., Lusson A., Sallet V., and Marfaing Y. Appl. Phys. Lett. 83 (2003) 287
17. Kondilis A. Phys. Rev., B 62 (2000) 10526