Post-annealing influence on properties of N-In codoped ZnO thin films prepared by ion beam enhanced deposition method

Applied Surface Science

Volumn 253, Issue 11, 2007, Pages 4990-4993

  Yuan, Ningyi ^a   Fan, Lining ^a   Li, Jinhua ^a   Wang, Xiuqin ^a  

^a CHANGZHOU UNIVERSITY   (China)

Author keywords

Electrical properties; Ion beam enhanced deposition; Photoluminescence; Post annealing; ZnO thin films

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; ION BEAM ASSISTED DEPOSITION; MOLECULAR STRUCTURE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; ZINC OXIDE;

ANNEALING TEMPERATURE; ION BEAM ENHANCED DEPOSITION METHOD (IBED); POST ANNEALING; ROOM TEMPERATURE;

THIN FILMS;

EID: 33847255986     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.11.003     Document Type: Article

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