Effects of annealing temperature on the carrier concentrations, the carrier mobilities and the quality of nitrogen doped ZnO films deposited by magnetron sputtering

Journal of Materials Science

Volumn 39, Issue 9, 2004, Pages 3195-3197

  Lim, Jongmin ^a   Shin, Kyoungchul ^a   Lee, Chongmu ^a  

^a Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; OXIDATION; PLASMAS; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER EPITAXY (ALE); EPITAXIAL FILMS; FULL WIDTH AT HALF MAXIMUM (FWHM); ROOM TEMPERATURE (RT);

ZINC OXIDE;

EID: 3543132354     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JMSC.0000025857.63690.67     Document Type: Article

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