Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

Sensors and Actuators, A: Physical

Volumn 172, Issue 1, 2011, Pages 9-14

  Yu, J ^a   Chen, G ^b   Li, C X ^b   Shafiei, M ^a   Ou, J Z ^a   Plessis, J Du ^a   Kalantar Zadeh, K ^a   Lai, P T ^b   Wlodarski, W ^a  

^a RMIT UNIVERSITY   (Australia)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Gas sensor; Hydrogen; RF sputtering; Schottky diode; Tantalum oxide

Indexed keywords

HYDROGEN GAS; HYDROGEN GAS SENSING; HYDROGEN-SENSING; OPERATING TEMPERATURE; RADIO FREQUENCY SPUTTERING; RF-SPUTTERING; SCHOTTKY DIODES; SIC SUBSTRATES; THIN LAYERS;

CHEMICAL SENSORS; DIODES; GAS DETECTORS; GAS SENSING ELECTRODES; HYDROGEN; SCHOTTKY BARRIER DIODES; SENSORS; SILICON; SILICON CARBIDE; TANTALUM; TANTALUM CARBIDE; TANTALUM OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 82755187363     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2011.02.021     Document Type: Conference Paper

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