Hydrogen-induced interface traps in a palladium/very thin oxide/silicon structure

Sensors and Materials

Volumn 11, Issue 1, 1999, Pages 041-050

  Ito, Kentaro ^a  

^a SHINSHU UNIVERSITY   (Japan)

Author keywords

Capacitance; Conductance; Hydrogen sensor; Interface traps; Pd MOS diode; Thin film

Indexed keywords

EID: 0033482817     PISSN: 09144935     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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