The epitaxial crystalline silicon-oxynitride layer on SiC(0 0 0 1): Formation of an ideal SiC-insulator interface

Progress in Surface Science

Volumn 86, Issue 11-12, 2011, Pages 295-327

  Tochihara, Hiroshi ^a   Shirasawa, Tetsuroh ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

New surface material; Semiconductor oxide interface; Silicon carbide; Silicon oxynitride; Ultrathin epitaxial film

Indexed keywords

AIR EXPOSURE; BAND GAPS; BRIDGE BONDS; BULK-LIKE; ELECTRONIC DEVICE; EPITAXIAL INTERFACES; EXPERIMENTAL TECHNIQUES; FIRST-PRINCIPLES CALCULATION; HIGH-QUALITY INTERFACE; INSULATOR FILMS; SCANNING TUNNELING SPECTROSCOPY; SIC(0 0 0 1); SILICON OXYNITRIDE; SILICON OXYNITRIDES; SOFT-X-RAY ABSORPTION; STRUCTURAL FEATURE; STUMBLING BLOCKS; SURFACE MATERIALS; THEORETICAL STUDY; ULTRA-THIN; UNIT CELLS;

CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXIAL FILMS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILICON; SILICON CARBIDE; SILICON NITRIDE; SILICON OXIDES; SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 81755174124     PISSN: 00796816     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.progsurf.2011.08.003     Document Type: Review

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