Electronic properties of an epitaxial silicon oxynitride layer on a 6H-SiC (0001) surface: A first-principles investigation

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Devynck, Fabien ^a,b   Sljivancanin Z ^b   Pasquarello, Alfredo ^a,b  

^a EPFL   (Switzerland)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ENERGY GAP; EPITAXIAL LAYERS; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY;

EMPTY STATES; HIGH-BARRIER POTENTIAL; LOCAL DENSITY;

SILICON NITRIDE;

EID: 34547850731     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769949     Document Type: Article

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