Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy

Materials Science Forum

Volumn 675 677, Issue , 2011, Pages 15-19

  Shirasawa, T ^a   Tanaka, S ^b   Muro, T ^c   Tamenori, Y ^c   Harada, Y ^d   Tokushima, T ^d   Kinoshita, T ^c   Shin, S ^a,d   Takahashi, T ^a   Tochihara, H ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^d RIKEN   (Japan)

Author keywords

Photoemission spectroscopy; Silicon carbide; Silicon oxynitride

Indexed keywords

NITRIDES; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE; SILICON NITRIDE;

CORE LEVEL PHOTOEMISSION SPECTROSCOPY; CORE LEVEL SHIFTS; EMISSION ANGLE DEPENDENCE; EPITAXIAL SILICON; SILICON OXYNITRIDES; SPECTRAL COMPONENTS; STRUCTURE MODELING;

CORE LEVELS;

EID: 79952548267     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.675-677.15     Document Type: Conference Paper

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