Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface

Physical Review Letters

Volumn 98, Issue 13, 2007, Pages

  Shirasawa, Tetsuroh ^a   Hayashi, Kenjiro ^a   Mizuno, Seigi ^a   Tanaka, Satoru ^a   Nakatsuji, Kan ^b   Komori, Fumio ^b   Tochihara, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; EPITAXIAL LAYERS; ETCHING; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE TREATMENT;

HYDROGEN GAS ETCHING; SILICON OXYNITRIDE (SION); UNIT CELLS;

SILICON NITRIDE;

EID: 34047113251     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.136105     Document Type: Article

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