Soft X-ray absorption and emission study of silicon oxynitride/Si(100) interface

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 1-3, 2007, Pages

  Yamashita, Yoshiyuki ^a   Oguchi, Kazuhiro ^a   Mukai, Kozo ^a   Yoshinobu, Jun ^a   Harada, Yoshihisa ^b   Tokushima, Takashi ^b   Shin, Shik ^a,b   Tamura, Naoyoshi ^c   Nohira, Hiroshi ^d   Hattori, Takeo ^d,e,f  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN SPring 8 Center   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

^d TOKYO CITY UNIVERSITY   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Interface; Oxynitride; Si(100); X ray absorption; X ray emission

Indexed keywords

CARRIER MOBILITY; ELECTRONIC STRUCTURE; SILICON; X RAYS;

CONDUCTION BAND MINIMUM (CBM); METAL-OXIDE-SILICON DEVICES; NONBONDING STATES; SILICON OXYNITRIDE; SOFT X-RAY ABSORPTION;

INTERFACES (MATERIALS);

EID: 34547868152     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L77     Document Type: Article

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