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Volumn 603, Issue 3, 2009, Pages 566-570

Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces

Author keywords

Low energy electron diffraction; Silicon carbide; Step formation and bunching

Indexed keywords

BALLOONS; DIFFRACTION; LOW ENERGY ELECTRON DIFFRACTION; MODEL STRUCTURES; NITRIDES; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SILICON NITRIDE; SULFUR COMPOUNDS;

EID: 58749105615     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.12.025     Document Type: Article
Times cited : (14)

References (16)
  • 4
    • 0012454212 scopus 로고    scopus 로고
    • Yoshida S., Nishino S., Harima H., and Kimoto T. (Eds), Trans Tech Publications, Zurich Pt. 2
    • In: Yoshida S., Nishino S., Harima H., and Kimoto T. (Eds). Silicon Carbide and Related Materials 2001 (2002), Trans Tech Publications, Zurich Pt. 2
    • (2002) Silicon Carbide and Related Materials 2001


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.