Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001)

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 24, 2009, Pages

  Shirasawa, T ^a   Hayashi, K ^b   Yoshida, H ^b   Mizuno, S ^b   Tanaka, S ^c   Muro, T ^d   Tamenori, Y ^d   Harada, Y ^e   Tokushima, T ^e   Horikawa, Y ^e   Kobayashi, E ^f   Kinoshita, T ^d   Shin, S ^a,e   Takahashi, T ^a   Ando, Y ^a   Akagi, K ^a,g   Tsuneyuki, S ^a   Tochihara, H ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c Department of Applied Quantum Physics and Nuclear Engineering ^*  (Japan)

^d JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^e RIKEN   (Japan)

^f SAGA LS   (Japan)

^g TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67649946029     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.241301     Document Type: Article

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