Band gap opening at the 6H-SiC(0 0 0 1) surface passivated by an epitaxial silicon oxynitride layer: A first-principles investigation

Surface Science

Volumn 602, Issue 18, 2008, Pages 2989-2993

  Devynck, Fabien ^a,b   Pasquarello, Alfredo ^a,b  

^a EPFL   (Switzerland)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

Band gap; Electronic structure; Epitaxial structure; Interface structure

Indexed keywords

ENERGY GAP; GALLIUM ALLOYS; NITRIDES; NITROGEN; NONMETALS; PASSIVATION; SILICON; SILICON CARBIDE; SILICON COMPOUNDS; SULFUR COMPOUNDS;

BAND GAP; BAND GAPS; DENSITY FUNCTIONALS; ELECTRONIC STRUCTURE; EPITAXIAL SILICON; EPITAXIAL STRUCTURE; FIRST-PRINCIPLES; INTERFACE STRUCTURE; LARGE BAND; OXIDE LAYERS; SIC(0 0 0 1);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 52049120335     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.07.036     Document Type: Article

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