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Volumn 77, Issue 8, 2008, Pages

First-principles investigation of an epitaxial silicon oxynitride layer on a 6H-SiC (0001) surface

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EID: 40949160924     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.085329     Document Type: Article
Times cited : (16)

References (18)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.