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Electrochemical and Solid-State Letters

Volumn 13, Issue 7, 2010, Pages

SiO2/Si structure having low leakage current fabricated by nitric acid oxidation method with si source

(3) Yanase, Takashi a Matsumoto, Taketoshi a Kobayashi, Hikaru a

a OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING RATE; FABRICATION METHOD; INTERFACIAL CHARACTERISTICS; LOW-LEAKAGE CURRENT; NITRIC ACID OXIDATION; NITRIC ACID SOLUTIONS; OXIDIZING SPECIES; OXYGEN ATOM; OXYGEN IONS; POLYSILAZANE; SI OXIDATION; SI SOURCES;

ACIDS; CHEMICAL VAPOR DEPOSITION; ETCHING; FABRICATION; HYDROFLUORIC ACID; NITRIC ACID; OXIDATION; OXYGEN; REACTION RATES; SILICON; SURFACE REACTIONS;

SILICON COMPOUNDS;

EID: 77956217658 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3424885 Document Type: Article

Times cited : (4)

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