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Volumn 158, Issue 12, 2011, Pages

Structural and photoluminescence properties of ZnO films grown on 6H-SiC substrates by low-temperature atomic layer deposition

(6) Lin, Ming Chih a Wu, Mong Kai a Yuan, Kai Yun a Chen, Miin Jang a Yang, Jer Ren a Shiojiri, Makoto b

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COLUMNAR GROWTH; CRYSTALLINE QUALITY; HIGH QUALITY; HIGH TEMPERATURE; LOW DEPOSITION TEMPERATURE; LOW TEMPERATURES; LOW THRESHOLDS; OPTICAL CONFINEMENT; OPTICALLY PUMPED; PHOTOLUMINESCENCE PROPERTIES; POST ANNEALING TREATMENT; POST DEPOSITION ANNEALING; PREFERRED ORIENTATIONS; ROOM TEMPERATURE; SIC SUBSTRATES; SUBSTRATE SURFACE; THRESHOLD INTENSITY; TWO-STEP APPROACH; ZNO BUFFER LAYER; ZNO FILMS;

ATOMIC LAYER DEPOSITION; METALLIC FILMS; SILICON CARBIDE; STIMULATED EMISSION; SUBSTRATES;

ZINC OXIDE;

EID: 81355163411 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.031112jes Document Type: Article

Times cited : (2)

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