Ultraviolet electroluminescence from n-ZnO-SiO2-ZnO nanocomposite/p-GaN heterojunction light-emitting diodes at forward and reverse bias

IEEE Photonics Technology Letters

Volumn 20, Issue 21, 2008, Pages 1772-1774

  Wu, M K ^a   Shih, Y T ^a   Li, W C ^a   Chen, H C ^a   Chen, M J ^a   Kuan, H ^b   Yang, J R ^a   Shiojiri, M ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Atomic layer deposition (ALD); Ultraviolet (UV) light emitting diode (LED); Zinc oxide (ZnO)

Indexed keywords

AL-DOPED ZNO; CURRENT BLOCKING LAYERS; GAN: MG; LIGHT-EXTRACTION EFFICIENCY; LOW REFRACTIVE INDEX; NANO-COMPOSITE LAYERS; NANODOTS; P-TYPE GAN; REVERSE BIAS; SPIN-ON; ULTRAVIOLET (UV) LIGHT-EMITTING DIODE (LED); ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET LIGHTS; UV EMISSIONS; ZNO;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; DIODES; ELECTROLUMINESCENCE; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; IMPACT IONIZATION; LIGHT; LIGHT EMISSION; REFRACTIVE INDEX; SILICON COMPOUNDS; ZINC; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 70349690251     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2004687     Document Type: Article

References (5)

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