Nucleation and interface chemistry of ZnO deposited on 6H-SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 15, 2005, Pages

  Ashrafi, A B M A ^a   Segawa, Y ^c   Shin, K ^b   Yao, T ^b  

^a RIKEN   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29644447527     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.155302     Document Type: Article

References (21)

1. M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.161205 65, 161205 (R) (2002).
2. H. D. Shun, T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1445280 91, 1993 (2002).
3. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nat. Mater. NMAACR 1476-1122 10.1038/nmat1284 4, 42 (2005).
4. S.-H. Lin, D. Shindo, H.-B. Kang, and K. Nakamura, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1349210 19, 506 (2001).
5. R. F. Service, Science SCIEAS 0036-8075 10.1126/science.276.5314.895 276, 895 (1997);
6. B. Gil, O. Briot, and R. L. Aulombard, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.R17028 52, R17028 (1995).
7. T. Nishida and N. Kobayashi, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(00)00703-X, 221, 297 (2000).
8. A. B. M. A. Ashrafi, B. P. Zhang, N. T. Binh, and Y. Segawa, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.43.1114, 43, 1114 (2004).
9. A. B. M. A. Ashrafi, B. P. Zhang, N. T. Binh, and Y. Segawa, Appl. Phys. Lett. APPLAB 0003-6951 84, 2851 (2004).
10. F. Midmann, B. Daudin, G. Feuillet, Y. Samson, J. L. Rouviere, and N. Pelekanos, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.367878 83, 7618 (1998).
11. S. H. Jones, L. K. Seidel, K. M. Lau, and M. Harold, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(91)90355-9, 108, 73 (1991).
12. D. J. Eaglesham, J. E. Bower, M. A. Gross, and S. Merchant, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119525 71, 219 (1997).
13. J. Lu, L. Haworth, D. I. Westwood, and J. E. Macdonald, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1350430 78, 1080 (2001).
14. J. M. Gerard, J. B. Jenin, J. Lefebure, J. M. Moisson, and F. Barthe, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(94)00775-6, 150, 351 (1995);
15. C. G. van de Walle and J. Neugebauer, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88.066103 88, 066103 (2002).
16. S. Il Park, T. S. Cho, S. J. Doh, J. L. Lee, and J. H. Je, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126972 77, 349 (2000).
17. Group III-Nitride Semiconductor Compounds, edited by, B. Gil, (Clarendon, Oxford, 1998).
18. A. B. M. A. Ashrafi, B. P. Zhang, N. T. Binh, and Y. Segawa, J. Cryst. Growth JCRGAE 0022-0248, 275, e2439 (2005).
19. D. Freundt, D. Holz, H. Luth, M. Romani, A. Rizzi, and D. Gerthse, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.589425 15, 1121 (1997).
20. Li Tie, Li Yu-zhi, Zhang Yu-heng, Gao Chen, Wei Shi-qiang, and Liu Wen-han, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.1120 52, 1120 (1995).
21. K. Nakajima, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.38.1875, 38, 1875 (1999).