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Volumn 25, Issue 5, 1996, Pages 855-862

MBE growth and properties of ZnO on sapphire and SiC substrates

Author keywords

GaN; Molecular beam epitaxy (MBE); Oxygen plasma; Reflected high energy electron diffraction; ZnO

Indexed keywords


EID: 0001397118     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666649     Document Type: Article
Times cited : (188)

References (18)
  • 6
    • 0003685207 scopus 로고
    • Exeter, UK: INSPEC Institute of Electrical Engineers
    • J.H. Edgar, ed. Properties of Group III Nitrides (Exeter, UK: INSPEC Institute of Electrical Engineers, 1994).
    • (1994) Properties of Group III Nitrides
    • Edgar, J.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.