Low-threshold stimulated emission in ZnO thin films grown by atomic layer deposition

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1053-1057

  Chen, Hsing Chao ^a   Chen, Miin Jang ^a   Wu, Mong Kai ^a   Cheng, Yung Chen ^b   Tsai, Feng Yu ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Atomic layer deposition; Stimulated emission; Wide bandgap semiconductor; Zinc oxide

Indexed keywords

ANNEALING; ATOMIC PHYSICS; ATOMS; CORUNDUM; METALLIC FILMS; OPTICAL FILMS; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; THICK FILMS; THIN FILMS; ZINC ALLOYS; ZINC OXIDE;

ATOMIC LAYER DEPOSITIONS; HIGH TEMPERATURES; HIGH-QUALITY; LOW THRESHOLDS; POST-DEPOSITION ANNEALING; SAPPHIRE SUBSTRATES; STIMULATED EMISSION; WIDE-BANDGAP SEMICONDUCTOR; ZNO THIN FILMS;

ATOMIC LAYER DEPOSITION;

EID: 48949088097     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.920042     Document Type: Article

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