|
Volumn 20, Issue 16, 2009, Pages
|
Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO 2 composite/p-AlGaN heterojunction light-emitting diodes
|
Author keywords
[No Author keywords available]
|
Indexed keywords
AL-DOPED ZNO;
ALGAN;
AMPLIFIED SPONTANEOUS EMISSIONS;
ATOMIC-LAYER DEPOSITIONS;
COMPOSITE LAYERS;
HIGH QUALITIES;
HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES;
INJECTION CURRENTS;
LATTICE IMAGES;
LIGHT EMITTING DIODE LEDS;
LIGHT-EXTRACTION EFFICIENCIES;
LOW REFRACTIVE INDICES;
LOW THRESHOLDS;
MATRIXES;
NANODOTS;
OPTICALLY PUMPED;
P TYPES;
SPECTRAL NARROWING;
SPIN-ON;
TRANSPORT OF CARRIERS;
ULTRA VIOLETS;
WURTZITE CRYSTAL STRUCTURES;
ZNO;
ZNO LAYERS;
ALUMINUM;
ATOMIC LAYER DEPOSITION;
CRYSTAL STRUCTURE;
CURRENT DENSITY;
ELECTROLUMINESCENCE;
EXTRACTION;
FEEDBACK;
GALLIUM;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
LIGHT;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
REFRACTIVE INDEX;
SILICON COMPOUNDS;
SPONTANEOUS EMISSION;
ZINC OXIDE;
ZINC SULFIDE;
SEMICONDUCTING ZINC COMPOUNDS;
QUANTUM DOT;
SILICON DIOXIDE;
ZINC OXIDE;
ARTICLE;
COMPOSITE MATERIAL;
CRYSTAL STRUCTURE;
LIGHT EMITTING DIODE;
LUMINESCENCE;
PRIORITY JOURNAL;
REFRACTION INDEX;
TRANSMISSION ELECTRON MICROSCOPY;
ULTRAVIOLET RADIATION;
|
EID: 65149090442
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/20/16/165201 Document Type: Article |
Times cited : (41)
|
References (35)
|