Molecular beam epitaxy of InGaN thin films on Si(111): Effect of substrate nitridation

Thin Solid Films

Volumn 517, Issue 24, 2009, Pages 6512-6515

  Romanyuk, Yaroslav E ^a   Kreier, Daniel ^a   Cui, Yi ^b   Yu, Kin Man ^b   Ager III, Joel W ^b   Leone, Stephen R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Gallium nitride; Molecular beam epitaxy; Nitridation; Silicon

Indexed keywords

AMORPHOUS SI; CRYSTALLINE QUALITY; DIRECT DEPOSITION; ELASTIC STRESS; ELECTRICAL PROPERTY; HIGH-TEMPERATURE ANNEALING; III-NITRIDES; N DEPOSITION; NITROGEN ATMOSPHERES; OHMIC BEHAVIOR; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SERIES RESISTANCES; SI (1 1 1); SI(111) SUBSTRATE; STRUCTURAL QUALITIES; SUBSTRATE NITRIDATION; SURFACE LAYERS;

AMORPHOUS SILICON; CRYSTAL GROWTH; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SILICON; SUBSTRATES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 71749113298     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.207     Document Type: Article

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