Growth of GaN directly on Si(111) substrate by controlling atomic configuration of Si surface by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 17-19, 2006, Pages

  Takemoto, Kikurou ^a   Murakami, Hisashi ^a   Iwamoto, Tomoyuki ^a   Matsuo, Yuriko ^b   Kangawa, Yoshihiro ^b   Kumagai, Yoshinao ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

GaN; GaN buffer layer; Metalorganic vapor phase epitaxy; Si substrate; Surface coverage

Indexed keywords

ETCHING; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL PRESSURE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

GAN BUFFER LAYER; MELT-BACK ETCHING; SI SUBSTRATE; SURFACE COVERAGE;

GALLIUM NITRIDE;

EID: 33745343072     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L478     Document Type: Article

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