Molecular beam epitaxial growth of GaN thin film on Si substrate with InN as interlayer

Journal of Crystal Growth

Volumn 294, Issue 2, 2006, Pages 197-201

  Hu, F R ^a   Ochi, K ^a   Zhao, Y ^a   Choi, B S ^a   Hane, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Photoluminescence; A3. Buffer layer; A3. Molecular beam epitaxy; B1. GaN; B1. Nanomaterial; B2. InN

Indexed keywords

BUFFER LAYERS; GALLIUM NITRIDE; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL MICROSTRUCTURES; HIGH ANGLE ANNULAR DETECTOR; INTERLAYERS; POLYCRYSTALLINE STRUCTURE;

THIN FILMS;

EID: 33947115350     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.07.009     Document Type: Article

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