Growth of InN and InGaN on Si substrate for solar cell applications

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-August, Issue , 2003, Pages 214-219

  Yamaguchi, T ^a   Morioka, C ^a   Mizuo, K ^a   Hori, M ^a   Araki, T ^a   Nanishi, Y ^a   Suzuki, A ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SILICON SOLAR CELLS; SUBSTRATES;

HIGH-EFFICIENCY SOLAR CELLS; PHOTOLUMINESCENCE PEAK; PHOTOVOLTAIC CHARACTERISTICS; RADIO FREQUENCY PLASMA; RECTIFYING CHARACTERISTICS; SOLAR-CELL APPLICATIONS; SUBSTRATE NITRIDATION; TANDEM SOLAR CELLS;

SOLAR CELLS;

EID: 84979226393     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCSPC.2003.1354457     Document Type: Conference Paper

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