-
1
-
-
31344462282
-
Pathways to 40% Efficient Concentrator Photovoltaics
-
PVSEC
-
th Eu. PVSEC, 2005, pp. 118-123.
-
(2005)
th Eu
, pp. 118-123
-
-
King, R.R.1
Law, D.C.2
Fetzer, C.M.3
Sherif, R.A.4
Edmondson, K.M.5
Kurtz, S.6
Kinsey, G.S.7
Cotal, H.L.8
Krut, D.D.9
Ermer, J.H.10
Karam, N.H.11
-
2
-
-
27944476343
-
Characterization and Analysis of InGaN Photovoltaic Devices
-
st IEEE PVSC, 2005, pp. 37-42.
-
(2005)
st IEEE PVSC
, pp. 37-42
-
-
Jani, O.1
Honsberg, C.2
Asghar, A.3
Nicol, D.4
Ferguson, I.5
Doolittle, A.6
Kurtz, S.7
-
4
-
-
0038711780
-
-
Y. Nanishi, Y. Saito and T. Yamaguchi, R-F Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys, Jpn. J. Appl. Phys., 42, 5A, 2003, pp. 2549-2559.
-
Y. Nanishi, Y. Saito and T. Yamaguchi, "R-F Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys", Jpn. J. Appl. Phys., 42, 5A, 2003, pp. 2549-2559.
-
-
-
-
5
-
-
0035881115
-
Nonlinear Macroscopic Polarization in III-V Nitride Alloys
-
8, /1-7
-
F. Bernardini, and V. Fiorentini, "Nonlinear Macroscopic Polarization in III-V Nitride Alloys", Phys. Rev. B, 64, 8, 2001, pp. 085207/1-7.
-
(2001)
Phys. Rev. B
, vol.64
, pp. 085207
-
-
Bernardini, F.1
Fiorentini, V.2
-
6
-
-
0033242946
-
Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences
-
V. Fiorentini F. Bernardini, "Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences", Phys. Stat. Sol. B, 216, 1, 1999, pp. 391-398.
-
(1999)
Phys. Stat. Sol. B
, vol.216
, Issue.1
, pp. 391-398
-
-
Fiorentini, V.1
Bernardini, F.2
-
7
-
-
41749114546
-
-
nd Ed.., Springer-Verlag, 2000.
-
nd Ed..", Springer-Verlag, 2000.
-
-
-
-
8
-
-
4244203187
-
Absorption and Emission of of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
-
V. Yu. Davydov et al., "Absorption and Emission of of Hexagonal InN. Evidence of Narrow Fundamental Band Gap," Phys. Stat. Sol. B, 229, 3, 2002, pp. R1-R3.
-
(2002)
Phys. Stat. Sol. B
, vol.229
, Issue.3
-
-
Davydov, V.Y.1
-
9
-
-
0142120866
-
Temperature Dependence of the Fundamental Band Gap of InN
-
J. Wu et al., "Temperature Dependence of the Fundamental Band Gap of InN", J. Appl. Phys., 94, 7, 2003, pp. 4457-4460.
-
(2003)
J. Appl. Phys
, vol.94
, Issue.7
, pp. 4457-4460
-
-
Wu, J.1
-
10
-
-
79955992797
-
Optical Bandgap Energy of Wurtzite InN
-
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, "Optical Bandgap Energy of Wurtzite InN", Appl. Phys. Lett., 81, 7, 2002, pp. 1246-1248.
-
(2002)
Appl. Phys. Lett
, vol.81
, Issue.7
, pp. 1246-1248
-
-
Matsuoka, T.1
Okamoto, H.2
Nakao, M.3
Harima, H.4
Kurimoto, E.5
-
12
-
-
0001094729
-
Solid Phase Immiscibility in GaInN
-
I. Ho, G.B. Stringfellow, "Solid Phase Immiscibility in GaInN," Appl. Phys. Lett., 69, 1996, pp. 2701-2703.
-
(1996)
Appl. Phys. Lett
, vol.69
, pp. 2701-2703
-
-
Ho, I.1
Stringfellow, G.B.2
-
13
-
-
0030644848
-
Incomplete Solubility in Nitride Alloys
-
I.H. Ho, G.B. Stringfellow, "Incomplete Solubility in Nitride Alloys," Mater. Res. Soc. Symp. Proc., 449, 1997, pp. 871-880.
-
(1997)
Mater. Res. Soc. Symp. Proc
, vol.449
, pp. 871-880
-
-
Ho, I.H.1
Stringfellow, G.B.2
-
14
-
-
79956009627
-
Phase Separation Suppression in InGaN Epitaxial Layers due to Biaxial Strain
-
A. Tabata, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, A. Kharchenko, T. Frey, D.J. As, D. Schikora, K. Lischka, J. Furthmuller, F. Bechstedt, "Phase Separation Suppression in InGaN Epitaxial Layers due to Biaxial Strain," Appl. Phys. Lett., 80, 2002, pp. 769-771.
-
(2002)
Appl. Phys. Lett
, vol.80
, pp. 769-771
-
-
Tabata, A.1
Teles, L.K.2
Scolfaro, L.M.R.3
Leite, J.R.4
Kharchenko, A.5
Frey, T.6
As, D.J.7
Schikora, D.8
Lischka, K.9
Furthmuller, J.10
Bechstedt, F.11
-
16
-
-
21544437251
-
0.92N Grown by Metalorganic Vapor Phase Epitaxy
-
0.92N Grown by Metalorganic Vapor Phase Epitaxy," Appl. Phys. Lett., 65, 5, 1994, pp. 593-594.
-
(1994)
Appl. Phys. Lett
, vol.65
, Issue.5
, pp. 593-594
-
-
Tanaka, T.1
-
17
-
-
0030241015
-
Electrical Transport in p-GaN, n-InN and n-InGaN
-
W. Geerts, J.D. Mackenzie, C.R. Abemathy, S.J. Pearton, and T. Schmiedel, "Electrical Transport in p-GaN, n-InN and n-InGaN", Solid-State Electron., 39, 9, 1996, pp. 1289-1294.
-
(1996)
Solid-State Electron
, vol.39
, Issue.9
, pp. 1289-1294
-
-
Geerts, W.1
Mackenzie, J.D.2
Abemathy, C.R.3
Pearton, S.J.4
Schmiedel, T.5
-
18
-
-
0001590229
-
Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization Charges in N- and Ga-face AlGaN/GaN Heterostructures
-
O. Ambacheret al., "Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization Charges in N- and Ga-face AlGaN/GaN Heterostructures", J. Appl. Phys., 85, 6, 1999, pp. 3222-3233.
-
(1999)
J. Appl. Phys
, vol.85
, Issue.6
, pp. 3222-3233
-
-
Ambacheret al, O.1
-
19
-
-
0000076783
-
Minority Carrier Diffusion Length and Lifetime in GaN
-
Z.Z. Bandic, P.M. Bridger, E.C. Piquette and T.C. McGill, "Minority Carrier Diffusion Length and Lifetime in GaN", Appl. Phys. Lett., 72, 24, 1998, pp. 3166-3168.
-
(1998)
Appl. Phys. Lett
, vol.72
, Issue.24
, pp. 3166-3168
-
-
Bandic, Z.Z.1
Bridger, P.M.2
Piquette, E.C.3
McGill, T.C.4
-
20
-
-
0000033319
-
0.098N Active Layer
-
0.098N Active Layer", Appl. Phys. Lett., 74, 4, 1999, pp. 558-560.
-
(1999)
Appl. Phys. Lett
, vol.74
, Issue.4
, pp. 558-560
-
-
Narukawa, Y.1
Saijou, S.2
Kawakami, Y.3
Fujita, S.4
Mukai, T.5
Nakamura, S.6
-
21
-
-
0001645382
-
Effect of an Oxidized Ni/Au p Contact on the Performance of GaN/InGaN Multiple Quantum Well Light-Emitting Diodes
-
H. Kim, D.J. Kim, S.J. Park, H. Hwang, "Effect of an Oxidized Ni/Au p Contact on the Performance of GaN/InGaN Multiple Quantum Well Light-Emitting Diodes," J. Appl. Phys., 88, 2001, pp. 1506-1508.
-
(2001)
J. Appl. Phys
, vol.88
, pp. 1506-1508
-
-
Kim, H.1
Kim, D.J.2
Park, S.J.3
Hwang, H.4
-
22
-
-
36449003017
-
Nonalloyed Ohmic Contacts on GaN using InN/GaN Short-Period Superlattices
-
M. E. Lin, F. Y. Huang, and H. Morkoç, "Nonalloyed Ohmic Contacts on GaN using InN/GaN Short-Period Superlattices," Appl. Phys. Lett. 64, 1997, pp. 2557.
-
(1997)
Appl. Phys. Lett
, vol.64
, pp. 2557
-
-
Lin, M.E.1
Huang, F.Y.2
Morkoç, H.3
-
23
-
-
0000310243
-
1-xN Compound Semiconductors and High-Power InGaN/AlGaN Double Heterostructure Violet-Light-Emitting Diodes
-
1-xN Compound Semiconductors and High-Power InGaN/AlGaN Double Heterostructure Violet-Light-Emitting Diodes," Micr. J., 25, 8, 1994, pp. 651-659.
-
(1994)
Micr. J
, vol.25
, Issue.8
, pp. 651-659
-
-
Nakamura, S.1
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