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Volumn 35, Issue 11, 2000, Pages 1837-1842

Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; FILM GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

DOUBLE CRYSTAL X RAY DIFFRACTION (DCXRD); EPILAYERS; FULL-WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING FILMS;

EID: 0034240635 PISSN: 00255408 EISSN: None Source Type: Journal
DOI: 10.1016/S0025-5408(00)00393-7 Document Type: Article

Times cited : (13)

References (14)

1
- 0030646397
- Beaumont B., Vaille M., Boufaden T., el Jani B., Gibart P. J Crystal Growth. 170:1997;316.
- (1997) J Crystal Growth , vol.170 , pp. 316
- Beaumont, B.¹ Vaille, M.² Boufaden, T.³ El Jani, B.⁴ Gibart, P.⁵

2
- 0000605238
- Joshkin V.A., Parker C.A., Bedair S.M., Krasnobaev L.Y., Cuomo J.J., Davis R.F., Suvkhanov A. Appl Phys Lett. 72:1998;2838.
- (1998) Appl Phys Lett , vol.72 , pp. 2838
- Joshkin, V.A.¹ Parker, C.A.² Bedair, S.M.³ Krasnobaev, L.Y.⁴ Cuomo, J.J.⁵ Davis, R.F.⁶ Suvkhanov, A.⁷

3
- 0032090930
- Nagano H., Qin Z.X., Jia A., Kato Y., Kobayashi M., Yoshikawa A., Takahashi K. J Crystal Growth. 189/190:1998;265.
- (1998) J Crystal Growth , vol.189-190 , pp. 265
- Nagano, H.¹ Qin, Z.X.² Jia, A.³ Kato, Y.⁴ Kobayashi, M.⁵ Yoshikawa, A.⁶ Takahashi, K.⁷

4
- 0033442642
- Ye Z.Z., Zhang H.X., Lu H.M., Zhao B.H. Chin Phys Lett. 16:1999;293.
- (1999) Chin Phys Lett , vol.16 , pp. 293
- Ye, Z.Z.¹ Zhang, H.X.² Lu, H.M.³ Zhao, B.H.⁴

5
- 0000998715
- Zhang H.X., Lu H.M., Ye Z.Z., Zhao B.H., Wang L., Que D.L. Acta Phys Sinica. 48:1999;1315.
- (1999) Acta Phys Sinica , vol.48 , pp. 1315
- Zhang, H.X.¹ Lu, H.M.² Ye, Z.Z.³ Zhao, B.H.⁴ Wang, L.⁵ Que, D.L.⁶

6
- 0032091463
- Hiroyama Y., Tamura M. Jpn J Appl Phys. 37:1998;L630.
- (1998) Jpn J Appl Phys , vol.37 , pp. 630
- Hiroyama, Y.¹ Tamura, M.²

7
- 0342984171
- Lee I.H., Lee J.J., Kung P., Sanchez F.J., Razeghi M. Appl Phys Lett. 74:1998;102.
- (1998) Appl Phys Lett , vol.74 , pp. 102
- Lee, I.H.¹ Lee, J.J.² Kung, P.³ Sanchez, F.J.⁴ Razeghi, M.⁵

8
- 0029344952
- Saranin A.A., Tarasova G.L., Kotljar V.G., Khramtsova E.A., Lifshits V.G. Surf Sci. 331-333:1995;458.
- (1995) Surf Sci , vol.331-333 , pp. 458
- Saranin, A.A.¹ Tarasova, G.L.² Kotljar, V.G.³ Khramtsova, E.A.⁴ Lifshits, V.G.⁵

9
- 0029307045
- Kung P., Saxler A., Zhang X., Walker D., Wang T.C., Ferguson I., Razeghi M. Appl Phys Lett. 66:1995;2958.
- (1995) Appl Phys Lett , vol.66 , pp. 2958
- Kung, P.¹ Saxler, A.² Zhang, X.³ Walker, D.⁴ Wang, T.C.⁵ Ferguson, I.⁶ Razeghi, M.⁷

10
- 0000524144
- Perlin P., Suski T., Teisseyre H., Leszezynski M., Grzegory I., Jun J., Porowski S., Boguslawski P., Bernholc J., Chervin J.C., Polian A., Moustakas T.D. Phys Rev Lett. 75:1995;296.
- (1995) Phys Rev Lett , vol.75 , pp. 296
- Perlin, P.¹ Suski, T.² Teisseyre, H.³ Leszezynski, M.⁴ Grzegory, I.⁵ Jun, J.⁶ Porowski, S.⁷ Boguslawski, P.⁸ Bernholc, J.⁹ Chervin, J.C.¹⁰ Polian, A.¹¹ Moustakas, T.D.¹²

11
- 85010812746
- Neugebauer J., Van de Walle C.G. Appl Phys Lett. 69:1996;503.
- (1996) Appl Phys Lett , vol.69 , pp. 503
- Neugebauer, J.¹ Van De Walle, C.G.²

12
- 0642279688
- Mattila T., Nieminen R.M. Phys Rev B. 55:1997;9571.
- (1997) Phys Rev B , vol.55 , pp. 9571
- Mattila, T.¹ Nieminen, R.M.²

13
- 3943096921
- Li X., Coleman J.J. Appl Phys Lett. 70:1997;438.
- (1997) Appl Phys Lett , vol.70 , pp. 438
- Li, X.¹ Coleman, J.J.²

14
- 0002924690
- Wang X.C., Xu S.J., Chua S.J., Li K., Zhang X.H., Zhang Z.H., Chong K.B., Zhang X. Appl Phys Lett. 74:1999;818.
- (1999) Appl Phys Lett , vol.74 , pp. 818
- Wang, X.C.¹ Xu, S.J.² Chua, S.J.³ Li, K.⁴ Zhang, X.H.⁵ Zhang, Z.H.⁶ Chong, K.B.⁷ Zhang, X.⁸

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