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Volumn 108, Issue 9, 2010, Pages

Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells

(5) Feng, Shih Wei a Lai, Chih Ming b Chen, Chien Hsun c Sun, Wen Ching c Tu, Li Wei d

a NATIONAL UNIVERSITY OF KAOHSIUNG (Taiwan)

b MING CHUAN UNIVERSITY (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

d NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC PARAMETER; COLLECTION EFFICIENCY; COMBINED EFFECT; DEVICE FABRICATIONS; DEVICE STRUCTURES; DOMINANT FACTOR; EFFICIENCY ENHANCEMENT; ELECTRO-OPTICAL CHARACTERISTICS; FILL FACTOR; HIGH QUALITY; HOMOJUNCTION; I-LAYER; INDIUM CONTENT; INGAN ALLOY; NUMERICAL SIMULATION; OPERATION MECHANISM; OPTIMIZED PERFORMANCE; PHOTONIC STRUCTURE; SAMPLE QUALITY; SIMULATION RESULT; THEORETICAL SIMULATION;

ABSORPTION; CONVERSION EFFICIENCY; CYTOLOGY; DEFECT STRUCTURES; INDIUM; MICROELECTRONICS; OPEN CIRCUIT VOLTAGE; OPTIMIZATION; PHOTONIC DEVICES; SOLAR CELLS;

DEFECT DENSITY;

EID: 78649277385 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3484040 Document Type: Article

Times cited : (63)

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