Growth and properties of GaN/Si heterojunction

Materials Science Forum

Volumn 480-481, Issue , 2005, Pages 531-536

  Hassan, Z ^a   Ng, S S ^a   Chew, G L ^a   Yam, F K ^a   Abdullah, M J ^a   Hashim, M R ^a   Ibrahim, K ^a   Kordesch, M E ^b  

^a SCHOOL OF PHYSICS   (Malaysia)

^b OHIO UNIVERSITY   (United States)

Author keywords

Characterization; Gallium nitride; IR; LP MOCVD; Schottky barriers

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON;

CRYSTAL QUALITY; HARMONIC OSCILLATOR MODEL; RESTSTRAHLEN PARAMETERS; SCHOTTKY BARRIERS;

GALLIUM NITRIDE;

EID: 35148845569     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-962-8.531     Document Type: Conference Paper

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