Characteristics of low-temperature-grown GaN films on Si(111)

Solid State Communications

Volumn 133, Issue 5, 2005, Pages 283-287

  Hassan, Z ^a   Lee, Y C ^a   Yam, F K ^a   Ibrahim, K ^a   Kordesch, M E ^b   Halverson, W ^c   Colter, P C ^c  

^a SCHOOL OF PHYSICS   (Malaysia)

^b OHIO UNIVERSITY   (United States)

^c SPIRE CORPORATION   (United States)

Author keywords

A. Semiconductors; B. Crystal growth; C. X ray diffraction; D. Electrical properties.

Indexed keywords

COMMERCIAL GROWTH; ELECTRICAL PROPERTIES; HIGH-POWER DEVICES; RECTIFICATION;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ELECTRON CYCLOTRON RESONANCE; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS;

SILICON;

EID: 11244294583     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.11.022     Document Type: Article

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