Evidence of interface conversion and electrical characteristics improvement of ultra-thin HfTiO films upon rapid thermal annealing

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Ye, Cong ^a   Wang, Yi ^a   Zhang, Jun ^a   Zhang, Jieqiong ^a   Wang, Hao ^a   Jiang, Yong ^b  

^a HUBEI UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; K-VALUES; NITROGEN AMBIENT; PHYSICAL THICKNESS; SI SUBSTRATES; ULTRA-THIN;

ELECTRIC PROPERTIES; SILICATES;

RAPID THERMAL ANNEALING;

EID: 80855137041     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658396     Document Type: Article

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